Gate-All-Around GAA Transistor

Overview

Gate-All-Around (GAA) transistors are the next-generation architecture following FinFET. Where FinFET gates wrap around three sides of a fin-shaped channel, GAA gates fully surround the channel (a nanosheet or nanoribbon), providing better electrostatic control at smaller geometries — improving leakage, power, and scaling headroom beyond what FinFET can achieve below approximately 5nm.

Samsung Foundry began manufacturing GAA transistors with its SF3 (3nm) process and continued with SF2 (2nm). At the OCP Global Summit 2025, Thomas Mermans described Samsung's 2nm GAA as the company's third iteration of the technology, underscoring an accumulated manufacturing maturity advantage. The 2nm process is the target node for hardening the Arm Neoverse V3 CSS CPU chiplet (by ADTechnology) as part of the four-party AI CPU chiplet platform.